Home Page of Dr. Oleg Rubel

Home  •  Research group  •  Publications  •  Jobs  •  Collaboration  •  Links  •  Teaching

Book contributions

Springer cover
Description of charge transport in disordered organic materials (Chap. 3)
by S.D. Baranovskii, O. Rubel, F. Jansson, and R. Österbacka
in Advances in polymer science: Organic Electronics
edited by G. Meller and T. Grasser
Springer (Berlin-Heidelberg, 2010)
pp. 45-71
http://www.springer.com/... , table of content (pdf)
Wiley cover
Description of charge transport in amorphous semiconductors (Chap. 2) and
Description of charge transport in disordered organic materials (Chap. 5)
by S. Baranovski and O. Rubel
in Charge transport in disordered solids with applications in electronics
edited by S. Baranovski
John Wiley & Sons (Chichester, England, 2006)
pp. 49-96, 221-266
http://www.wiley-vch.de/... , table of content (pdf)
Springer cover
Description of charge transport in disordered materials (Chap. 9)
by S. Baranovski and O. Rubel
in Springer Handbook of Electronic and Photonic Materials
edited by S. Kasap and P. Capper
Springer (2006)
pp. 161-186
http://www.springer.com/...

Articles

View all details
> 
 Understanding the chemical and structural variability in the efficiency of band edge optical transitions of 2D monolayer materials
> 
 Roadmap for the development of transition metal oxide cathodes for rechargeable zinc-ion batteries
> 
 Defect tolerance of lead-halide perovskite (100) surface relative to bulk: band bending, surface states, and characteristics of vacancies
> 
 How to verify the precision of density-functional-theory implementations via reproducible and universal workflows
> 
 Application of murexide as a capping agent for fabrication of magnetite anodes for supercapacitors: experimental and first-principle studies
> 
 Software implementation for calculating Chern and Z2 topological invariants of crystalline solids with WIEN2k all-electron density functional package
> 
 Supercapacitor performance of magnetite nanoparticles enhanced by a catecholate dispersant: experiment and theory
> 
 Band unfolding with a general transformation matrix: from code implementation to interpretation of photoemission spectra
> 
 Computational screening of cathode materials for Zn-ion rechargeable batteries
> 
 Electrochemical stability of ZnMn2O4: Understanding Zn-ion rechargeable battery capacity and degradation
> 
 Length-gauge optical matrix elements in WIEN2k
> 
 Benchmarking exchange-correlation potentials with the mstar60 dataset: Importance of the nonlocal exchange potential for effective mass calculations in semiconductors
> 
 WloopPHI: A tool for ab initio characterization of Weyl semimetals
> 
 Giant spontaneous Hall effect in a nonmagnetic Weyl-Kondo semimetal
> 
 Perturbation approach to ab initio effective mass calculations
> 
 Band alignment of monolayer CaP3, CaAs3, BaAs3 and the role of p-d orbital interactions in the formation of conduction band minima
> 
 Rashba band splitting in two-dimensional Ruddlesden-Popper halide perovskites
> 
 Deciphering the role of key defects in Sb2Se3, a promising candidate for chalcogenide-based solar cells
> 
 Electronic properties of Pb-I deficient lead halide perovskites
> 
 Stability of aziridinium lead iodide perovskite: ring strain and water vulnerability
> 
 Unraveling the water degradation mechanism of CH3NH3PbI3
> 
 Exploration of the bright and dark exciton landscape and fine structure of MoS2 using G0W0-BSE
> 
 Bimolecular theory of non-radiative recombination in semiconductors with disorder
> 
 Electronic band structure of nitrogen diluted Ga(PAsN): Formation of the intermediate band, direct and indirect optical transitions, localization of states
> 
 Pressure dependence of direct optical transitions in ReS2 and ReSe2
> 
 Structural dynamics in hybrid halide perovskites: Bulk Rashba splitting, spin texture, and carrier localization
> 
 Stacking defects in GaP nanowires: Electronic structure and optical properties
> 
 μSR study of spin freezing and persistent spin dynamics in NaCaNi2F7
> 
 Kinetic mechanism for reversible structural transition in MoTe2 induced by excess charge carriers
> 
 Aziridinium lead iodide: a stable, low bandgap hybrid halide perovskite for photovoltaics
> 
 Adsorption of maleic acid monomer on the surface of hydroxyapatite and TiO2: a pathway toward biomaterial composites
> 
 Alloying strategy for two-dimensional GaN optical emitters
> 
 Localization of electronic states in III-V semiconductor alloys: a comparative study
> 
 Ionization energy as a stability criterion for halide perovskites
> 
 One-dimensional electron gas in strained lateral heterostructures of single layer materials
> 
 Thermodynamic origin of instability in hybrid halide perovskites
> 
 Recent developments in the ABINIT software package
> 
 Configuration dependence of band-gap narrowing and localization in dilute GaAs1-xBix alloys
> 
 Molecular dynamics of Fibrinogen adsorption onto Graphene, but not onto Poly(ethylene glycol) surface, increases exposure of recognition sites that trigger immune response
> 
 Density functional theory and experimental studies of caffeic acid adsorption on zinc oxide and titanium dioxide nanoparticle
> 
 Robust Bloch character at the band edges of hybrid halide perovskites
> 
 Efficient driving of piezoelectric transducers using a biaxial driving technique
> 
 An atomic charge model for graphene oxide for exploring its bioadhesive properties in explicit water
> 
 Unfolding the band structure of disordered solids: from bound states to high-mobility Kane fermions
> 
 Binding of solvated peptide (EPLQLKM) with a graphene sheet via simulated coarse-grained approach
> 
 First-principle modelling of the ferroelectric switching in BaTiO3: concurrent switching vs domain wall motion
> 
 Marble game with optimal ferroelectric switching
> 
 Favorable adsorption of capped amino acids on graphene substrate driven by desolvation effect
> 
 First-principle prediction of single-carrier avalanche multiplication in chalcopyrite semiconductors
> 
 BerryPI: A software for studying polarization of crystalline solids with WIEN2k density functional all-electron package
> 
 Impact onization threshold energy of trigonal Selenium: an ab initio study
> 
 Modeling the radiation ionization energy and energy resolution of trigonal and amorphous selenium from first principles
> 
 Interaction of hot carriers with optical phonons in Selenium
> 
 Determination of Nitrogen Concentration in Dilute GaNAs by STEM HAADF Z-Contrast Imaging
> 
 Investigation of optical and concentration profile changes of InGaNAs/GaAs heterostructures induced by thermal annealing
> 
 Luminescence dynamics in Ga(AsBi)
> 
 Bulk properties of α-PbO from first-principle self-consistent calculations
> 
 Atomic scale annealing effects on InxGa1-xNyAs1-y studied by TEM three-beam imaging
> 
 Generalized lucky-drift model for impact ionization in semiconductors with disorder
> 
 Evidence of two disorder scales in Ga(AsBi)
> 
 Clustering Effects in Ga(AsBi)
> 
 Quantum modeling of semiconductor gain materials and vertical-external-cavity surface-emitting laser systems
> 
 Effect of bonding and static atomic displacements on composition quantification in InxGa1-xNyAs1-y
> 
 Lone-pair states as a key to understanding impact ionization in chalcogenide semiconductors
> 
 Formation energies of antiphase boundaries in GaAs and GaP: an ab initio study
> 
 Reversible vs irreversible photodarkening in a-Se: the kinetics study
> 
 Lucky-drift model for impact ionization in amorphous semiconductors
> 
 Direct structural evidence of the change in N-III bonding in (GaIn)(NAs) before and after thermal annealing
> 
 Modeling the compositional dependence of electron diffraction in dilute GaAs- and GaP-based compound semiconductors
> 
 Resonant electron tunneling through defects in GaAs tunnel diodes
> 
 Resonant tunneling as a dominant transport mechanism in n-GaAs/p-GaAs tunnel diodes
> 
 Exact solution for hopping dissociation of germinate electron hole pairs in a disordered chain
> 
 Spectral and time dependences of the energy transfer of bound optical excitations in GaP(N)
> 
 Avalanche multiplication in amorphous selenium and its utilization in imaging
> 
 Material development for improved 1 eV (GaIn)(NAs) solar cell structures
> 
 Annealing effects on the nanoscale indium and nitrogen distribution in Ga(NAs) and (GaIn)(NAs) quantum wells
> 
 Spectral dependence of the photoluminescence decay in disordered semiconductors
> 
 Relaxation and recombination in InAs quantum dots
> 
 Kinetic effects in recombination of optical excitations in disordered quantum heterostructures: theory and experiment
> 
 Avalanche multiplication phenomenon in amorphous semiconductors: Amorphous selenium versus hydrogenated amorphous silicon
> 
 Model of temperature quenching of photoluminescence in disordered semiconductors and comparison to experiment
> 
 Nature and dynamics of carrier escape from InAs/GaAs quantum dots
> 
 Non-radiative recombination of optical excitations in (GaIn)(NAs) quantum wells
> 
 Model of annealing-induced short-range order effects in (GaIn)(NP) alloys
> 
 Nanoanalytical quantification of the nitrogen content in Ga(NAs)/GaAs by using transmission electron microscopy in combination with refined structure factor calculation
> 
 Kinetics of the photostructural changes in a-Se films
> 
 On the concentration and field dependence of the hopping mobility in disordered organic solids
> 
 Theoretical description of hopping transport in disordered materials
> 
 On description of coulomb effects caused by doping in amorphous and disordered organic semiconductors
> 
 Quantitative description of disorder parameters in (GaIn)(NAs) quantum wells from the temperature-dependent photoluminescence spectroscopy
> 
 Temperature dependent optical properties of InAs/GaAs quantum dots: independent carrier relaxation versus exciton
> 
 On the theoretical description of photoluminescence in disordered quantum structures
> 
 Concentration dependence of the hopping mobility in disordered organic solids
> 
 Lucky-drift model for avalanche multiplication in amorphous semiconductors
> 
 Columnar [001]-oriented nitrogen order in Ga(NAs) and (GaIn)(NAs) alloys
> 
 Specific structural and compositional properties of (GaIn)(NAs) and their influence on optoelectronic device performance
> 
 Hopping relaxation of excitons in GaInNAs/GaNAs quantum wells
Q.
A.

© 2025 by O. Rubel